Authors: Anak Agung Alit Apriyana, Jin He, and Yue Ping Zhang
Source: FERMAT, Volume 3, Article 3, May_Jun, 2014
Abstract: This paper focuses on electromagnetic analysis and circuit modeling of an ultra-wideband single-pole single-throw (SPST) switch in a 65-nm CMOS technology up to millimeter-wave frequencies. We begin by carrying out the electromagnetic analysis using the HFSS, which is a three-dimensional full-wave field solver. A novel technique to simulate an on-state switching transistor is proposed and highlighted. Then, the circuit modeling is performed by including all extracted extrinsic parasitic inductances, capacitances, and resistances, especially the drain-to-source parasitic capacitances introduced by the overlapped multi-finger metalization of the transistors. Next, the electromagnetic analysis and circuit modeling are validated with the measurements of the SPST switch over the frequency ranges from 1 to 110 GHz and 140 to 170 GHz, respectively. Finally, we point out that although the electromagnetic analysis can provide a deep physical insight into the switch behavior, it has an inherent limitation, namely it cannot handle the devices for the electron transfer phenomena such as the hot carrier effect, well proximity effect, negative bias temperature instability etc.
Index Terms: 65-nm CMOS, 60 GHz, millimeter wave, switch.
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Electromagnetic Analysis and Circuit Modeling of Ultra-Wideband SPST Switch in 65-nm CMOS Technology